Flash memory device capable of overcoming fast program/slow...

Details Flash memory device capable of overcoming fast program/slow... Flash memory device capable of overcoming fast program/slow...

2007-06-20

2010-10-05

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185330, C365S185290, C365S185270, C365S185180, C365S185110, C365S185220, C365S185240

Reexamination Certificate

active

07808829

ABSTRACT:
An erase operating time can be shortened and an erase operating characteristic can be improved in a flash memory device. The flash memory device includes a plurality of memory cell blocks, an operating voltage generator and a controller. Each of the plurality of memory cell blocks includes memory cells connected to a plurality of word lines. A voltage generator is configured to apply an erase voltage to a memory cell block selected for an erase operation, and change a level of the erase voltage if an attempt of the erase operation is not successful. A controller is configured to control the voltage generator to apply a first erase voltage to a memory cell block selected for an erase operation. The first erase voltage corresponds to a previous erase voltage that was used successfully in completing a previous erase operation. The first erase voltage is an erase voltage that is used in a first erase attempt for the erase operation.

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