Flash memory device being programmed and verified using...

Details Flash memory device being programmed and verified using... Flash memory device being programmed and verified using...

2008-05-27

2008-05-27

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200

Reexamination Certificate

active

11304433

ABSTRACT:
A program operation and a program verification operation are repeatedly performed. The program verification operation is performed on memory cells including pass cells to obtain a uniform distribution characteristic of a threshold voltage. Furthermore, the program verification operation is performed with a compare voltage being set higher than a target voltage initially so that a threshold voltage of a memory cell is sufficiently higher than the target voltage. The program verification operation is again performed lowering the compare voltage according to the repetition number. Thus, normally programmed cells are prevented from being again excessively programmed.

REFERENCES:
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 6040996 (2000-03-01), Kong
patent: 7023735 (2006-04-01), Ban et al.
Suh et al., “TA 7.5: A 3.3V 32 Mb NAND Flash Memory with Incremental Step Pulse Programming Scheme,” IEEE International Solid State Circuits Conference, pp. 128-130 (Feb. 16, 1995).

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