Flash memory device and read operation method thereof

Details Flash memory device and read operation method thereof Flash memory device and read operation method thereof

2008-05-27

2008-05-27

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185120

Reexamination Certificate

active

11488836

ABSTRACT:
A flash memory device having a function of selectively changing a precharge voltage for a sensing node and a read operation method thereof. The flash memory device includes a memory cell array, a precharge voltage generator, and a plurality of page buffers. The memory cell array includes a plurality of memory cells respectively sharing a plurality of word lines and a plurality of bit lines. The precharge voltage generator outputs one of first and second voltage as a precharge voltage in response to a selection control signal. The plurality of page buffers are connected to every pair of the plurality of bit lines one by one and precharge sensing lines to the precharge voltage in response to a precharge control signal.

REFERENCES:
patent: 6813214 (2004-11-01), Cho et al.
patent: 2006/0274588 (2006-12-01), Kang et al.
patent: 10-093054 (1998-04-01), None
patent: 1020020002681 (2002-01-01), None
patent: 1020040006933 (2004-01-01), None
patent: 1020040082637 (2004-09-01), None

Affiliated with

Also associated with

Rating

Flash memory device and read operation method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory device and read operation method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and read operation method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3911142