Flash memory device and read operation method thereof

Details Flash memory device and read operation method thereof Flash memory device and read operation method thereof

2008-05-27

2008-05-27

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185120

Reexamination Certificate

active

07379337

ABSTRACT:
A flash memory device having a function of selectively changing a precharge voltage for a sensing node and a read operation method thereof. The flash memory device includes a memory cell array, a precharge voltage generator, and a plurality of page buffers. The memory cell array includes a plurality of memory cells respectively sharing a plurality of word lines and a plurality of bit lines. The precharge voltage generator outputs one of first and second voltage as a precharge voltage in response to a selection control signal. The plurality of page buffers are connected to every pair of the plurality of bit lines one by one and precharge sensing lines to the precharge voltage in response to a precharge control signal.

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patent: 10-093054 (1998-04-01), None
patent: 1020020002681 (2002-01-01), None
patent: 1020040006933 (2004-01-01), None
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