Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2010-04-19
2011-10-11
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S189050
Reexamination Certificate
active
08036039
ABSTRACT:
A flash memory device includes a memory cell array on which data is stored, and page buffers that are connected to the memory cells through the bit lines and apply one of the first voltage, second voltage or third voltage between the first and second voltage, to the respective bit line when performing the program.
REFERENCES:
patent: 5768215 (1998-06-01), Kwon et al.
patent: 7336538 (2008-02-01), Crippa et al.
patent: 7408806 (2008-08-01), Park et al.
patent: 7480179 (2009-01-01), Li
patent: 7489549 (2009-02-01), Mokhlesi
patent: 7663922 (2010-02-01), Park et al.
patent: 2003/0016560 (2003-01-01), Kawamura
patent: 2005/0018488 (2005-01-01), Kim et al.
patent: 2005/0213378 (2005-09-01), Chang
patent: 2007/0242512 (2007-10-01), Park et al.
patent: 2009/0097319 (2009-04-01), Sekar et al.
patent: 2009/0103356 (2009-04-01), Mokhlesi
patent: 2009/0285024 (2009-11-01), Kang
patent: 1020030081623 (2003-10-01), None
patent: 10-2005-0007653 (2005-01-01), None
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Nguyen Tuan T.
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