Flash memory device and method of programming the same

Details Flash memory device and method of programming the same Flash memory device and method of programming the same

2007-09-11

2007-09-11

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185190

Reexamination Certificate

active

11205245

ABSTRACT:
Flash memory devices include a memory array having a plurality of NAND strings of EEPROM cells therein. A word line driver is provided to improve programming efficiency. The word line driver is electrically coupled to the memory array by a plurality of word lines. The word line driver includes a plurality of pass voltage switches. These switches have outputs electrically coupled by diodes to the plurality of word lines. Methods of programming flash memory devices include applying a pass voltage to a plurality of unselected word lines in a non-volatile memory array while simultaneously applying a sequentially ramped program voltage to a selected word line in the non-volatile memory array. The sequentially ramped program voltage has a minimum value that is clamped by a word line driver to a level not less than a value of the pass voltage.

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