Flash memory device and method of operating the same

Details Flash memory device and method of operating the same Flash memory device and method of operating the same

2008-03-26

2010-12-07

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170

Reexamination Certificate

active

07848150

ABSTRACT:
A flash memory device and a method of operating the same is disclosed, in which the conditions of voltage (or current) applied during the reading operation are differently adjusted according to an accumulated number of times of a programming operation, an erasing operation or a reading operation (an accumulated number of operation cycle). Even if a level of the threshold voltage is changed to a level which differs from that of the target voltage by an increase of the accumulated number of operation cycle regardless of the programming operation (or the erasing operation) being normally performed, the reliability of the reading operation can be enhanced to prevent a malfunction of the memory cell from being generated.

REFERENCES:
patent: 2007/0291536 (2007-12-01), Kang
patent: 100719381 (2007-05-01), None
patent: 100733952 (2007-06-01), None
Notice of Allowance for Korean Application No. 10-2007-0091518.

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