Flash memory device and method of forming the same with...

Details Flash memory device and method of forming the same with... Flash memory device and method of forming the same with...

2006-06-27

2006-06-27

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257S321000

Reexamination Certificate

active

07067388

ABSTRACT:
The present invention provides a flash memory device and method for making the same having a floating gate structure with a semiconductor substrate and shallow trench isolation (STI) structure formed in the substrate. A first polysilicon layer is formed over the substrate and the STI structure. The recess formed within the first polysilicon layer is over the STI structure and extends through the first polysilicon layer to the STI structure. An oxide fill is provided within the recess and is etched back. ONO (oxide-nitride-oxide) layer conformally covers the oxide fill and the first polysilicon layer. The second polysilicon layer covers the ONO layer. The oxide fill within the recess provides a minimum spacing between the second polysilicon layer and the corner of the STI regions, thereby avoiding the creation of a weak spot and reducing the risk of gate breakdown, gate leakage, and improving device reliability.

REFERENCES:
patent: 6764920 (2004-07-01), Yang et al.
patent: 6838342 (2005-01-01), Ding
patent: 2005/0045944 (2005-03-01), Gratz et al.

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