Flash memory device and method for fabricating the same, and...

Details Flash memory device and method for fabricating the same, and... Flash memory device and method for fabricating the same, and...

2008-04-29

2008-04-29

Nguyen, Dao H. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C257S314000, C257S315000, C257SE21182, C257SE21267, C365S185180, C365S185240, C438S157000, C438S176000

Reexamination Certificate

active

07366026

ABSTRACT:
A flash memory device of SONOS structure and a method for fabricating the same, and programming and erasing operation methods, to improve reliability such as endurance and retention, are disclosed, which includes a first conductive type semiconductor substrate; an ONO layer on the semiconductor substrate; a first control gate on the ONO layer; second and third control gates on the ONO layer at both sides of the first control gate; and source and drain regions in the surface of the semiconductor substrate at both sides of the second and third control gates.

REFERENCES:
patent: 6259142 (2001-07-01), Dawson et al.
patent: 6531350 (2003-03-01), Satoh et al.
patent: 6586296 (2003-07-01), Watt
patent: 6822926 (2004-11-01), Kanai et al.
patent: 6939767 (2005-09-01), Hoefler et al.
patent: 6949788 (2005-09-01), Fujiwara et al.
patent: 2001/0002712 (2001-06-01), Horiguchi et al.

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