Flash memory device and fabricating method thereof

Details Flash memory device and fabricating method thereof Flash memory device and fabricating method thereof

2008-09-23

2010-11-30

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S750000, C438S622000

Reexamination Certificate

active

07843065

ABSTRACT:
A flash memory device may include a first insulating layer on a base insulating layer on a substrate, a lower wire layer that fills a trench in the first insulating layer, a first insulating interlayer and a second insulating layer stacked in sequence on the first insulating layer and the lower wire layer, a middle wire layer that fills a trench in the second insulating layer, and a second insulating interlayer and an upper wire layer stacked in sequence on the middle wire layer, wherein the lower wire layer. The middle wire layer and the upper wire layer may be electrically connected to each other and the first insulating layer may include a low-k layer in contact with the base insulating layer. In addition, each of the first insulating interlayer, the second insulating layer, and the second insulating interlayer may include an FSG layer.

REFERENCES:
patent: 7572734 (2009-08-01), Naik et al.
patent: 2004/0207092 (2004-10-01), Burrell et al.

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