Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-09-17
2010-06-08
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S189090
Reexamination Certificate
active
07733706
ABSTRACT:
A flash memory device and an erase method thereof are included. The erase method includes performing an erase operation of a memory cell block including a plurality of pages, performing an erase verify operation and storing unerased page information about a page including unerased memory cells that have not been normally erased, and performing an additional erase operation of the page including the unerased memory cells based on the unerased page information. When the unerased memory cells exist, the erase verify operation and the additional erase operation are performed repeatedly.
REFERENCES:
patent: 5822252 (1998-10-01), Lee et al.
patent: 6000004 (1999-12-01), Fukumoto
patent: 6570790 (2003-05-01), Harari
patent: 6711054 (2004-03-01), Kanamitsu et al.
patent: 6891752 (2005-05-01), Bautista et al.
patent: 7263006 (2007-08-01), Aritome
patent: 7515481 (2009-04-01), Aritome
patent: 1270394 (2000-10-01), None
patent: 1523367 (2004-08-01), None
patent: 08-063987 (1996-03-01), None
patent: 100187671 (1999-01-01), None
patent: 1020060061086 (2006-06-01), None
Hynix / Semiconductor Inc.
Nguyen Tuan T.
Townsend and Townsend / and Crew LLP
LandOfFree
Flash memory device and erase method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory device and erase method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device and erase method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4178751