Flash memory device and associated recharge method

Details Flash memory device and associated recharge method Flash memory device and associated recharge method

2006-07-17

2008-07-22

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185250, C365S226000, C365S230030

Reexamination Certificate

active

07403420

ABSTRACT:
A flash memory device comprises first and second mat structures connected to respective first and second high voltage lines, and a switch circuit connected between the first and second high voltage lines. The switch circuit supplies a program voltage from the first high voltage line to the second high voltage line during a first program operation of the flash memory device, and then supplies a voltage from the second high voltage line to the first high voltage line during a second program operation.

REFERENCES:
patent: 6337807 (2002-01-01), Futatsuyama et al.
patent: 6731540 (2004-05-01), Lee et al.
patent: 2005/0002235 (2005-01-01), Kaneda
patent: 2003-178590 (2003-06-01), None
patent: 100449269 (2004-09-01), None

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