Flash memory device

Static information storage and retrieval – Floating gate – Particular biasing

Patent

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Details

36518521, G11C 1134

Patent

active

056755368

ABSTRACT:
The present invention discloses a flash memory cell which can prevent an over programming in a way that uses a cross coupled latch circuit and peripheral circuits upon a byte programming into a flash memory cell programmed by hot electron injection.

REFERENCES:
patent: 5243573 (1993-09-01), Makihara et al.

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