Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-10-18
1998-06-30
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518529, 36518533, 365218, 365226, G11C 1134, G11C 700
Patent
active
057743991
ABSTRACT:
The present invention relates to a flash memory device and is constructed in such a way that the memory cell blocks are sequentially selected according to the input of the erasing signal and the output voltage of the negative charge pump is supplied only to the selected memory cell block to prevent the degradation of the operational performance of the device due to excessive load applied to the output terminal of the negative charge pump at the time of erase operation. Therefore, the present invention relates to a flash memory device in which the magnitude of the load applied to the output terminal of the negative charge pump is effectively reduced and accordingly, the degradation of operational performance of the device can be prevented.
REFERENCES:
patent: 5384742 (1995-01-01), Miyakawa et al.
patent: 5399928 (1995-03-01), Lin et al.
patent: 5513146 (1996-04-01), Atsumi et al.
patent: 5612913 (1997-03-01), Cappelletti et al.
Hyundai Electronics Industries Co,. Ltd.
Nelms David C.
Phan Trong
LandOfFree
Flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1867179