Flash memory device

Static information storage and retrieval – Floating gate – Particular biasing

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Details

365218, G11C 1300

Patent

active

057346119

ABSTRACT:
The present invention relates to a flash memory device and, more particularly, to a flash memory device which is constructed to prevent over-erase and stress of a cell by preventing re-erase of a sector, which was confirmed as a pass, at the time of the re-erase operation due to an occurrence of a fail sector by storing the address of the sector, which was confirmed as a pass, at the time of the erase operation of a multi sector, so as to improve the reliability of the product and the life of the cell.
The present invention generally applies to all the devices which utilize a multi sector erase performing algorithm among flash memory devices which utilize a stack memory cell.

REFERENCES:
patent: 5270979 (1993-12-01), Harari et al.
patent: 5623442 (1997-04-01), Gotou et al.

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