Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-08-12
1998-03-31
Fears, Terrell W.
Static information storage and retrieval
Floating gate
Particular biasing
365218, G11C 1300
Patent
active
057346119
ABSTRACT:
The present invention relates to a flash memory device and, more particularly, to a flash memory device which is constructed to prevent over-erase and stress of a cell by preventing re-erase of a sector, which was confirmed as a pass, at the time of the re-erase operation due to an occurrence of a fail sector by storing the address of the sector, which was confirmed as a pass, at the time of the erase operation of a multi sector, so as to improve the reliability of the product and the life of the cell.
The present invention generally applies to all the devices which utilize a multi sector erase performing algorithm among flash memory devices which utilize a stack memory cell.
REFERENCES:
patent: 5270979 (1993-12-01), Harari et al.
patent: 5623442 (1997-04-01), Gotou et al.
Kim Dae Hyun
Kwon Gyu Wan
Fears Terrell W.
Hyundai Electronics Industries Co,. Ltd.
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