Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-07-06
2008-10-14
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185260, C365S185280, C365S185290, C365S185330, C257S314000, C257S315000, C257S316000, C257S320000, C257S321000, C257S322000, C257S326000
Reexamination Certificate
active
07436707
ABSTRACT:
A flash memory cell structure has a substrate, a select gate, a first-type doped region, a shallow second-type doped region, a deep second-type doped region, and a doped source region. The substrate has a stacked gate. The select gate is formed on the substrate and adjacent to the stacked gate. The first-type ion formed region is doped in the substrate and adjacent to the select gate as a drain. The shallow second-type doped region is formed on one side of the first-type doped region below the stacked gate. The deep second-type doped region, which serves as a well, is formed underneath the first-type doped region with one side bordering on the shallow second-type doped region. The doped source region is formed on a side of the shallow second-type doped region as a source.
REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5416738 (1995-05-01), Shrivastava
patent: 6091644 (2000-07-01), Hsu et al.
patent: 2004/0065917 (2004-04-01), Fan et al.
Hsu Cheng-Yuan
Hung Chih-Wei
Sung Da
Hsu Winston
Nguyen Van-Thu
Powership Semiconductor Corp.
LandOfFree
Flash memory cell structure and operating method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory cell structure and operating method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell structure and operating method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3993156