Flash memory cell erase scheme using both source and channel...

Details Flash memory cell erase scheme using both source and channel... Flash memory cell erase scheme using both source and channel...

2005-04-05

2005-04-05

Nguyen, Tan T. (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185270

Reexamination Certificate

active

06876582

ABSTRACT:
A method of erasing a non-volatile memory includes applying a first potential of first polarity to a control gate; applying a second potential of second polarity to a bulk region, the second potential being an N magnitude; and applying a third potential of second polarity to a source region, the third potential being an M magnitude, wherein the N and M are substantially the same.

REFERENCES:
patent: 4405868 (1983-09-01), Lockwood
patent: 4694314 (1987-09-01), Terada et al.
patent: 4703196 (1987-10-01), Arakawa
patent: 5521866 (1996-05-01), Akaogi
patent: 5537349 (1996-07-01), Devin
patent: 5638320 (1997-06-01), Wong et al.
patent: 5646886 (1997-07-01), BrahmbHatt
patent: 5668757 (1997-09-01), Jeng
patent: 5740110 (1998-04-01), Madurawe
patent: 5856943 (1999-01-01), Jeng
patent: 5870336 (1999-02-01), Devin
patent: 5963477 (1999-10-01), Hung
patent: 6151252 (2000-11-01), Atsumi et al.
patent: 6166962 (2000-12-01), Chen et al.
patent: 6169693 (2001-01-01), Chan et al.
patent: 6507522 (2003-01-01), Lee et al.
patent: 6628550 (2003-09-01), Hung et al.
patent: 6721208 (2004-04-01), Jung et al.
patent: 62-281199 (1986-07-01), None

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