Flash memory cell and methods for programming and erasing

Details Flash memory cell and methods for programming and erasing Flash memory cell and methods for programming and erasing

2007-05-08

2007-05-08

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C257S288000, C257S314000, C365S185160, C365S185170

Reexamination Certificate

active

11511763

ABSTRACT:
Flash memory cells are presented which comprise a dielectric material formed above a substrate channel region, a charge trapping material formed over the dielectric material, and a control gate formed over the charge trapping material. The cell may be programmed by directing electrons from the control gate into the charge trapping material to raise the cell threshold voltage. The electrons may be directed from the control gate to the charge trapping material by coupling a substrate to a substrate voltage potential, and coupling the control gate to a gate voltage potential, where the gate voltage potential is lower than the substrate voltage potential. The cell may be erased by directing electrons from the charge trapping material into the control gate to lower a threshold voltage of the flash memory cell, such as by coupling the substrate to a substrate voltage potential, and coupling the control gate to a gate voltage potential, where the gate voltage potential is higher than the substrate voltage potential.

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Nonvolatile Semiconducor Memory Technology, “Floating Gat Flash Memories”, Manzur Gill and Stefan Lai, 1998 IEEE Press, 5 pgs.

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