Flash memory cell and method of making the same

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437 52, 437241, H01L 21265, H01L 2170, H01L 2700, H01L 2102

Patent

active

057029652

ABSTRACT:
A highly efficient split-gate type flash memory cell with an insulation spacer of an ONO or ON structure formed at the side walls of the floating gate according to the present invention can improve program and erasure capabilities of the cell by preventing reduction of the coupling ratio and leakage of electrons through the floating gate and the control gate.

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patent: 5284784 (1994-02-01), Mamley
patent: 5424232 (1995-06-01), Yamauchi
patent: 5445984 (1995-08-01), Hong et al.
patent: 5474947 (1995-12-01), Chang et al.
patent: 5479368 (1995-12-01), Keshtbod
patent: 5496747 (1996-03-01), Hong

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