Flash memory cell and a new method for sensing the content of th

Details Flash memory cell and a new method for sensing the content of th Flash memory cell and a new method for sensing the content of th

1996-10-21

1998-05-12

Nelms, David C.

Static information storage and retrieval

Floating gate

36518519, 257316, 257322, G11C 1604

Patent

active

057516316

ABSTRACT:
A method for sensing the content of a FLASH memory cell, and a new FLASH memory cell structure that is suitable for use with this new sensing scheme. In a first aspect, a semiconductor memory cell comprises a lightly doped n-region including a channel region; a first insulating layer overlying portions of said n-region; a floating gate overlying said first insulating layer; a second insulating layer overlying said floating gate; and a control gate overlying second insulating layer.

REFERENCES:
patent: 5231299 (1993-07-01), Ning
patent: 5341342 (1994-08-01), Brahmbhatt

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