Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-07-17
2009-12-22
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S230060
Reexamination Certificate
active
07636259
ABSTRACT:
Systems and methods are disclosed herein to provide a flash memory array with independently erasable sectors. For example, in accordance with an embodiment of the present invention, an integrated circuit includes a multi-sector flash memory array comprising first and second subarrays of flash memory cells. First and second sets of word lines are connected with control gates of the flash memory cells of the first and second subarrays. A first set of row drivers connected with the first set of word lines are adapted to selectively tri-state or drive the first set of word lines with a first voltage. A second set of row drivers connected with the second set of word lines are adapted to selectively tri-state or drive the second set of word lines with the first voltage. A plurality of bitlines are connected with flash memory cells of the first and second subarrays.
REFERENCES:
patent: 5185718 (1993-02-01), Rinerson et al.
patent: 5289053 (1994-02-01), Ohtsuka
patent: 5349558 (1994-09-01), Cleveland et al.
patent: 5357475 (1994-10-01), Hasbun et al.
patent: 6084798 (2000-07-01), Lee
patent: 6535430 (2003-03-01), Ogura et al.
patent: 6574148 (2003-06-01), Chevallier
patent: 6662263 (2003-12-01), Wong
patent: 6807103 (2004-10-01), Cavaleri et al.
patent: 6909641 (2005-06-01), Naso et al.
patent: 6930927 (2005-08-01), Pascucci
patent: 6965526 (2005-11-01), Cavaleri et al.
Cappelletti et al., Flash Memories, 1999, pp. 241-257.
U.S. Appl. No. 11/487,751, Loren McLaury.
McLaury Loren
Rutledge David Lee
Haynes and Boone LLP
Lallice Semiconductor Corporation
Phung Anh
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