Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-06-06
2006-06-06
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185190, C365S185290, C365S185330, C365S185310
Reexamination Certificate
active
07057932
ABSTRACT:
Flash memory supporting methods for erasing memory cells using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
REFERENCES:
patent: 4384349 (1983-05-01), McElroy
patent: 4503524 (1985-03-01), McElroy
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5265059 (1993-11-01), Wells et al.
patent: 5357463 (1994-10-01), Kinney
patent: 5477499 (1995-12-01), Van Buskirk et al.
patent: 5485423 (1996-01-01), Tang et al.
patent: 5650964 (1997-07-01), Chen et al.
patent: 5726933 (1998-03-01), Lee et al.
patent: 5808937 (1998-09-01), Chi et al.
patent: 5828605 (1998-10-01), Peng et al.
patent: 5862078 (1999-01-01), Yeh et al.
patent: 5917755 (1999-06-01), Rinerson et al.
patent: 5949717 (1999-09-01), Ho et al.
patent: 5956268 (1999-09-01), Lee
patent: 5991195 (1999-11-01), Nobukata
patent: 6049484 (2000-04-01), Lee et al.
patent: 6049486 (2000-04-01), Lee et al.
patent: 6055183 (2000-04-01), Ho et al.
patent: 6055184 (2000-04-01), Acharya et al.
patent: 6122201 (2000-09-01), Lee et al.
patent: 6160740 (2000-12-01), Cleveland
patent: 6236608 (2001-05-01), Ratnam
patent: 6243299 (2001-06-01), Rhinerson et al.
patent: 6285588 (2001-09-01), Fastow
patent: 6456533 (2002-09-01), Hamilton et al.
patent: 6563741 (2003-05-01), Mihnea et al.
patent: 6614693 (2003-09-01), Lee et al.
patent: 6795348 (2004-09-01), Mihnea et al.
patent: 6798699 (2004-09-01), Mihnea et al.
patent: 6894931 (2005-05-01), Yaegashi et al.
patent: 6903407 (2005-06-01), Kang
patent: 2003/0235080 (2003-12-01), Yaegashi et al.
patent: 2004/0196685 (2004-10-01), Miida
Lee et al., “Using Erase Self-Detrapped Effect To Eliminate the Flash Cell Program/Erase Cycling VthWindow Close,” IEEE, 1999.
Chen Chun
Mihnea Andrei
Leffert Jay & Polglaze P.A.
Nguyen Viet Q.
LandOfFree
Flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3680128