Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2011-07-19
2011-07-19
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S008000, C117S009000, C117S200000, C117S201000, C117S202000
Reexamination Certificate
active
07981212
ABSTRACT:
A flash lamp annealing device comprises a heater plate, a loader, a lamp set and a control circuit. The heater plate heats a wafer to a predetermined temperature. The wafer is loaded on the loader disposed on the heater plate. The lamp set has one or a plurality of lamps to provide the wafer with a power. The control circuit is coupled to the lamp set to control the flash time of the lamp set.
REFERENCES:
patent: 2004/0018702 (2004-01-01), Ito et al.
patent: 2006/0228897 (2006-10-01), Timans
patent: 2008/0069550 (2008-03-01), Timans et al.
patent: 2002-252174 (2002-09-01), None
Hung Jui-Pin
Tien Fu-Kang
Birch & Stewart Kolasch & Birch, LLP
Kunemund Robert M
Taiwan Semiconductor Manufacturing Co. Ltd.
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