Flash-erasable semiconductor memory device having an improved re

Details Flash-erasable semiconductor memory device having an improved re Flash-erasable semiconductor memory device having an improved re

1992-11-20

1998-06-02

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

36518509, 36518518, 36518512, 36518526, 36518529, G11C 1606

Patent

active

057611270

ABSTRACT:
A flash-erasable semiconductor memory device comprises a memory cell array including a plurality of memory cell transistors each having an insulated floating gate for storing information and a control electrode provided on said floating gate, wherein the flash-erasable semiconductor memory device includes a write control circuit supplied with a write control signal, when writing information. The write control circuit produces a control signal such that a leading edge of the drain control signal appears after a leading edge of the gate control signal. Further, the gate control circuit shuts off the gate control signal such that a trailing edge of the gate control signal appears after a trailing edge of the drain control signal.

REFERENCES:
patent: 4250569 (1981-02-01), Sasaki et al.
patent: 4344154 (1982-08-01), Klaas et al.
patent: 4503524 (1985-03-01), McElroy
patent: 4720816 (1988-01-01), Matsuoka et al.
patent: 4769787 (1988-09-01), Furusawa et al.
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5089867 (1992-02-01), Lee
patent: 5235544 (1993-08-01), Caywood
patent: 5267196 (1993-11-01), Talreja et al.
patent: 5307316 (1994-04-01), Takemae
Y. Terada et al., "120MSEC 128kx 8-bit 164kx 16-bit CMOS EEPROM's," IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, New York, U.S., pp. 1244-1249.
S. Ali et al., "A 50-ns 256kCMOS Split-Gate EPROM," IEEE Journal of Solid-State Circuits., vol. 23, No. 1, Feb. 1988, New York, U.S., pp. 79-85.

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