Flash EPROM with block erase flags for over-erase protection

Details Flash EPROM with block erase flags for over-erase protection Flash EPROM with block erase flags for over-erase protection

1995-02-02

1997-01-21

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518511, 36518522, 3651853, 36518533, 365218, 36523003, G11C 700, G11C 1600

Patent

active

055965300

ABSTRACT:
A FLASH EPROM device includes a memory array organized into a plurality of blocks of memory cells. An energizing circuit applies energizing voltages to the blocks of memory cells to read and program addressed cells, and to erase selected blocks or the whole memory array. An erase verify circuit separately verifies erasure of blocks in the plurality of block memory cells. Control logic controls the energizing circuit to re-erase blocks which fail erase verify. The control logic includes a plurality of block erase flags which correspond to respective blocks of memory cells in the array. The erase verify is responsive to the block erase flags to verify only those blocks having a set block erase flag. If the block passes erase verify, then the block erase flag is reset. Only those blocks having a set block erase flag after the erase verify operation are re-erased. To support this operation, the circuit also includes the capability of erasing only a block of the memory array at a time.

REFERENCES:
patent: 5095461 (1992-03-01), Miyakawa et al.
patent: 5371702 (1994-12-01), Nakai et al.
patent: 5414664 (1995-05-01), Lin et al.
patent: 5428569 (1995-06-01), Kato et al.

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