Flash eprom memory circuit having source side programming

Details Flash eprom memory circuit having source side programming Flash eprom memory circuit having source side programming

1992-06-08

1994-01-18

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365218, 257314, 257316, G11C 1140

Patent

active

052804461

ABSTRACT:
A flash EPROM memory array which operates at lower voltage power supply with no disturbance during operation. The memory circuit comprises a plurality of memory elements in a matrix fashion with each element including a semiconductor substrate, a drain region, a source region, a floating gate, a control gate, and a select gate. The low voltage power supply operation capability is achieved by a special arrangement on the said memory array such that the programming of the memory cell is achieved by high efficient hot electron injection which allows lower drain voltage during programming. No disturbance during program and erase occurs due to a control gate line running in parallel with the drain line. No disturbance access during read operation because of alternating drain and source lines such that the memory device can be read from the source side.

REFERENCES:
patent: 4462090 (1984-07-01), Iizuka
patent: 4531203 (1985-07-01), Masuoka et al.
patent: 4868629 (1989-09-01), Eitan
patent: 4939558 (1990-07-01), Smayling et al.
patent: 4988635 (1991-01-01), Ajika et al.
patent: 4989053 (1991-01-01), Shelton
S. Sze, "Semiconductor Devices-Physics and Technology, " .COPYRGT.1985 Bell Tel. Labs, pp. 375-377.

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