Flash EPROM cell and method for operating same

Details Flash EPROM cell and method for operating same Flash EPROM cell and method for operating same

1990-11-09

1993-08-10

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular biasing

365218, 365900, 257322, 257900, G11C 1134, G11C 700

Patent

active

052355446

ABSTRACT:
A flash EPROM cell may be erased by placing a negative voltage on the control gate of a flash EPROM cell having spaced apart source and drain regions in a semiconductor substrate, and having a floating gate, a control gate and a sidewall gate, while biasing the drain at a positive voltage.

REFERENCES:
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patent: 4399523 (1983-08-01), Gerber et al.
patent: 5060195 (1991-10-01), Gill et al.
patent: 5070480 (1991-12-01), Caywood
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5097444 (1992-03-01), Fong
patent: 5103273 (1992-04-01), Gill et al.
patent: 5126808 (1992-06-01), Montalvo et al.

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