Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-01-29
1997-10-14
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518529, 257315, 257316, 257317, H01L 2968
Patent
active
056778767
ABSTRACT:
A nonvolatile semiconductor memory device having a plurality of memory cells, each memory cell comprising a semiconductor substrate having a first conductivity, a first impurity region having a second conductivity, a second impurity region having the second conductivity, said first and second impurity regions being formed separated from each other in a surface area of the semiconductor substrate, a channel region formed between the pair of impurity regions in the surface area of the semiconductor substrate, a floating gate electrode formed on the channel region via a tunneling insulation layer, and a control gate electrode formed on the floating gate electrode via a dielectric layer, the channel region having formed in it an impurity diffused layer having the second conductivity to thereby reduce a leakage current flowing between the first impurity region and the semiconductor substrate when extracting electrons from the floating gate and the leakage current between the second impurity region and the semiconductor substrate when injecting electrons to the floating gate.
REFERENCES:
patent: 5274588 (1993-12-01), Manzur et al.
patent: 5488245 (1996-01-01), Shimizu et al.
Kananen Ronald P.
Le Vu A.
Nelms David C.
Sony Corporation
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