Flash EEPROM with controlled discharge time of the word lines an

Details Flash EEPROM with controlled discharge time of the word lines an Flash EEPROM with controlled discharge time of the word lines an

1997-10-03

1999-12-07

Zarabian, A.

Static information storage and retrieval

Floating gate

Particular biasing

36518525, G11C 1134

Patent

active

059994568

ABSTRACT:
A Flash EEPROM having at least one memory sector. The memory sector includes a plurality of rows and columns of memory cells; at least one negative voltage generator for generating a negative voltage commonly charging the plurality of rows to a negative potential during an erase pulse for erasing the memory cells of the at least one memory sector and control logic activating the negative voltage generator at the beginning of the erase pulse and deactivating the negative voltage generator at the end of the erase pulse. The Flash EEPROM having for controlling a discharge time of the rows of the at least one memory sector at the end of the erase pulse.

REFERENCES:
patent: 4797856 (1989-01-01), Lee
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5357466 (1994-10-01), Hong
patent: 5416738 (1995-05-01), Shrivastava
patent: 5444655 (1995-08-01), Yoshikawa
patent: 5452248 (1995-09-01), Naruke et al.
patent: 5485423 (1996-01-01), Tang et al.
patent: 5708588 (1998-01-01), Haddad
Feste, Jean-Pierre, "Une Seule Tension de 5V pour la Flash 16 Mbits," Electronique 2045(42):8, Nov., 1994.
Atsumi et al., "A 16-Mb Flash EEPROM With A New Self-Data-Refresh Scheme For A Sector Erase Operation," IEICE Transactions on Electronics E77-C(5):791-798, May, 1994.

Affiliated with

Also associated with

Rating

Flash EEPROM with controlled discharge time of the word lines an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash EEPROM with controlled discharge time of the word lines an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash EEPROM with controlled discharge time of the word lines an will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-831650