Flash EEPROM self-adaptive voltage generation circuit operative

Details Flash EEPROM self-adaptive voltage generation circuit operative Flash EEPROM self-adaptive voltage generation circuit operative

1995-10-18

1997-01-21

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular biasing

36518533, 36518907, 365226, G11C 1600

Patent

active

055965326

ABSTRACT:
An EEPROM system operative within a continuous source voltage range includes a controller having a processor and a memory, and an EEPROM module connected to the controller and including a plurality of EEPROM chips. A representative one of the EEPROM chips includes a comparator, a programmable voltage generator, and a regulated charge pump circuit. The comparator compares a source voltage provided to the EEPROM system against one or more reference voltages indicative of subranges within the operative source voltage range, to generate one or more control signals indicative of the subrange within which the source voltage resides. The regulated charge pump circuit generates from the source voltage, a regulated high voltage output which is substantially unaffected by changes in the source voltage. Included in the regulated charge pump circuit are a feedback circuit, and an open loop gain adjustment circuit which is responsive to the the one or more control signals generated by the comparator. The programmable voltage generator is programmed by the controller to generate a plurality of specified voltages for programming, reading, and erasing selected EEPROM cells in the EEPROM chip. To adjust for changes in the source voltage provided to the EEPROM system, the controller requests the one or more control signals generated from the comparator, and modifies values programmed into the programmable voltage generator accordingly.

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