Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-03-28
1997-06-10
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular biasing
36518518, 36518528, 36518529, 365104, G11C 1600
Patent
active
056383274
ABSTRACT:
A flash-EEPROM memory array presenting a NOR architecture wherein the memory cells, organized in rows and columns and having drain regions connected to respective bit lines, source regions connected to a common source line, and control gate regions connected to respective word lines, present an asymmetrical structure wherein one of the source and drain regions presents a highly resistive portion to permit programming and erasing of the cells at different regions. The array includes bias transistors arranged in a row and each connected between a respective bit line and the common source line, for maintaining at the same potential the drain and source regions of the cells connected to the nonaddressed bit lines during programming, and so preventing spurious writing.
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Caser Fabio Tassan
Dallabora Marco
Sali Mauro L.
Villa Corrado
Ahn Harry K.
Carlson David V.
Nguyen Tan T.
SGS--Thomson Microelectronics S.r.l.
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