Flash EEPROM fabrication process that uses a selective wet chemi

Details Flash EEPROM fabrication process that uses a selective wet chemi Flash EEPROM fabrication process that uses a selective wet chemi

1991-11-12

1994-05-17

Powell, William A.

Fishing, trapping, and vermin destroying

437238, 437240, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

053127811

ABSTRACT:
A method for wet etching disposable spacers in silicon integrated circuits is provided. Illustratively, a pair of spacers is formed over a polysilicon substrate. A second pair of spacers is formed from doped silicon dioxide over the first pair of spacers. Then the second pair of spacers is etched away with NH.sub.4 OH/H.sub.2 O.sub.2, thus providing a means for defining the underlying polysilicon layer, e.g., by etching.

REFERENCES:
patent: 4113551 (1978-09-01), Bassous et al.
patent: 4652334 (1987-03-01), Jain et al.

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