Flash EEPROM cell, method of manufacturing the same, method of p

Details Flash EEPROM cell, method of manufacturing the same, method of p Flash EEPROM cell, method of manufacturing the same, method of p

1996-05-10

1998-09-22

Zarabia, A.

Static information storage and retrieval

Floating gate

Multiple values

36518518, G11C 1134

Patent

active

058124497

ABSTRACT:
The present invention relates to a flash EEPROM cell, method of manufacturing the same, and method of programming and reading the same and, more particularly, to a flash EEPROM cell constructed in such a way that two floating gates are formed on top of a channel region to implement a memory cell to, and from, which 4-numeration information can be programmed and read out, and an output of 4-numeration information is obtained depending on the programming or erasing of each of the two floating gates.

REFERENCES:
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5159570 (1992-10-01), Mitchell et al.
patent: 5168465 (1992-12-01), Harari
patent: 5189497 (1993-02-01), Komori et al.
patent: 5652719 (1997-07-01), Tanaka et al.

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