Flash device

Patent

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Details

3541451, G03B 1505

Patent

active

048396869

ABSTRACT:
An improved flash device which is characterized in the provision of a power source, a main capacitor adapted to be charged by the power source, a flash firing unit operable to consume charge stored in the main capacitor to emit a flash light, a trigger circuit for exciting the flash firing unit in response to a flash firing command, an insulated gate bipolar transistor disposed in a discharge loop for the main capacitor through the flash firing unit, and a control circuit for applying a voltage to a gate of the insulated gate bipolar transistor in response to the flash firing command and for interrupting the application of the voltage to the insulated gate bipolar transistor in response to a flash terminating command.

REFERENCES:
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patent: 4309092 (1982-01-01), Kitagawa
patent: 4310785 (1982-01-01), Iwata
patent: 4460264 (1984-07-01), Winter
patent: 4697906 (1987-10-01), Kobayashi et al.
patent: 4717861 (1988-01-01), Yuasa et al.
"Mosfet", Nikkei Electronics, No. 395, pp. 165-188 (May 19, 1986).
K. Muramoto et al, "New Type of Bipolar-Mode MOS FET", Toshiba Review, vol. 40, No. 5, pp. 427-432 (May 1985).
Y. Sasada et al, "High-Voltage IGBT Module", Toshiba Review, vol. 41, No. 10, pp. 873-876 (Oct., 1986).
"Canon EOS 650 Test: Best Autofocus SLR Yet", Modern Photography, pp. 84, 92, 99 and 100 (Jul. 1987).

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