Flash control device using cascade-connected thyristor and MOSFE

Details Flash control device using cascade-connected thyristor and MOSFE Flash control device using cascade-connected thyristor and MOSFE

1992-07-09

1995-01-03

Loke, Steven Ho Yin

Electric lamp and discharge devices: systems

Pulsating or a.c. supply

Plural load device systems

315239, 315241P, 257107, 257133, 257146, G03B 700, H05B 3700, H01L 2974

Patent

active

053790898

ABSTRACT:
The semiconductor device is composed of a thyristor and a MOSFET cascade-connected. The thyristor includes a bipolar transistor cascade-connected with the MOSFET, the base (p.sup.-- semiconductor region) of which is adapted to be punched through by the application of a working voltage. Thus, the thyristor can easily be latched and unlatched in response to the turn-on and turn-off of the MOSFET. Thus the semiconductor device can be securely on/off controlled by only the single gate (G) of the MOSFET. By using such semiconductor device as a switching element in a flash control device, a high performance flash control device with high flashing efficiency is provided.

REFERENCES:
patent: 5151762 (1992-09-01), Uenishi et al.
IEEE Electron Device Letters, vol. 11, No. 2, Feb. 1990, "The MOS-Gated Emitter Switched Thyristor" by Baliga et al., pp. 75-77.
IEEE Transactions on Electron Devices, vol. ED-31, No. 6, Jun. 1984, B. Jayant Baliga, et al., "The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device", pp. 821-828.
IEEE Transactions on Electron Devices, vol. ED-33, No. 10, Oct. 1986, Victor A. K. Temple, "MOS-Controlled Thyristors--A New Class of Power Devices", pp. 1609-1618.

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