Fixed resistance high density parallel ROM device

Details Fixed resistance high density parallel ROM device Fixed resistance high density parallel ROM device

1996-09-30

1997-11-04

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Resistive

365 51, G11C 1300

Patent

active

056847335

ABSTRACT:
The present invention provides a fixed resistance sense-routed high density parallel ROM device for maintaining the resistance of a buried N+ region on a sense route constant. When data is read from a ROM cell matrix, the selection of different ROM cell transistors does not change the resistance of the buried N+ region on the sense route and thus enables a simplified design of a sense amplifier. The inactive select gate or transfer gate that is activated by the select line can be isolated by ion implantation for forming a buried P+ isolation and thus avoiding the narrowing or the cutting-off of the width of the active transfer gate or select gate due to ion diffusion.

REFERENCES:
patent: 5499208 (1996-03-01), Shoji

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