Static information storage and retrieval – Format or disposition of elements
Patent
1998-10-02
1999-09-07
Fears, Terrell W.
Static information storage and retrieval
Format or disposition of elements
G11C 1300
Patent
active
059497009
ABSTRACT:
Five square dynamic random access memory (DRAM) cell is prepared with a vertical transfer device with long channel length. In this construction, channel length is not affected by cell size scaling requirements.
REFERENCES:
patent: 4462040 (1984-07-01), Ho et al.
patent: 4630088 (1986-12-01), Ogura et al.
patent: 4801988 (1989-01-01), Kenney
patent: 4894697 (1990-01-01), Chin et al.
patent: 4920065 (1990-04-01), Chin et al.
patent: 4941026 (1990-07-01), Temple
patent: 4977436 (1990-12-01), Tsuchiya et al.
patent: 5001526 (1991-03-01), Gotou
patent: 5071782 (1991-12-01), Mori
patent: 5073519 (1991-12-01), Rodder
patent: 5136350 (1992-08-01), Itoh
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5185646 (1993-02-01), Mizuno
patent: 5198383 (1993-03-01), Teng et al.
patent: 5231037 (1993-07-01), Yuan et al.
patent: 5324673 (1994-06-01), Fitch et al.
patent: 5350708 (1994-09-01), Yagishita et al.
patent: 5362665 (1994-11-01), Lu
patent: 5414288 (1995-05-01), Fitch et al.
patent: 5480838 (1996-01-01), Mitsui
patent: 5504359 (1996-04-01), Rodder
S. Nakajima et al.; A Trench MOSFET With Surface Source/Drain Contacts; IEDM; CH2252-5/85/000-0200; 1985; pp. 200-203.
W.F. Richardson, et al., A Trench Transistor Cross-Point DRAM Cell; IEDM, CH2252-5/85/0000-0714, 1985; pp. 714-717.
B. Wu; Pillar DRAM Cell with Dual Channels and an Underneath Trench-in-Trench Capacitor Built on Soi Structure; IBM Technical Disclosure Bulletin, vol. 36 No. 11;
Furukawa Toshiharu
Hakey Mark C.
Horak David V.
Ma William H.
Mandelman Jack A.
Fears Terrell W.
International Business Machines - Corporation
Walter, Jr. Howard J.
LandOfFree
Five square vertical dynamic random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Five square vertical dynamic random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Five square vertical dynamic random access memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1810856