Five layer semiconductor device with separate insulated turn-on

Details Five layer semiconductor device with separate insulated turn-on Five layer semiconductor device with separate insulated turn-on

1984-05-16

1986-08-05

Clawson, Jr., Joseph E.

Earth boring, well treating, and oil field chemistry

Specified breaker component for emulsion or gel

357 2314, 357 30, 357 38, 357 43, 357 86, 5072526, H01L 2978

Patent

active

046046380

ABSTRACT:
A semiconductor device has first and second layers of n-type conductivity, a third layer of p-type conductivity which is formed between the first and second layers, a fourth layer of p-type conductivity which is in contact with the second layer, and a gate electrode which is capacitively coupled through an insulation layer with the third layer to constitute a MOS gate thyristor. The semiconductor device further has first terminals through which a voltage is supplied to the gate electrode to form a current channel in the third layer portion under the insulation layer, and second terminals for supplying a reverse bias voltage between the first and third layers.

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L. Sevin, "Field Effect Transistors,".RTM.1965, Texas Instruments, McGraw-Hill Book Co., p. 124.
Baliga, et al., "The Insulated Gate Rectifier (IGR): A New Power Switching Device", IEDM pp. 264-267, (1982).

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