Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-04-13
1994-02-01
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257224, 257229, 257232, 257233, 257243, 377 60, 377 62, 348243, 348249, 348316, H01L 2978, H01L 2714, H01L 3100
Patent
active
052834506
ABSTRACT:
A solid state image sensing device comprising first and second horizontal shift registers of two-phase drive system, a smear drain region disposed in an opposing relation to a first storage section of the second horizontal shift register to which the first phase drive pulse of the second horizontal shift register is applied and a channel stop region disposed in an opposing relation to a second storage section of the second horizontal shift register to which the second phase drive pulse is applied, wherein a smear component is drained to the smear drain region, and a hole component is drained to the channel stop region for thereby reducing a dark current of the second horizontal shift register to about that of the first horizontal shift register. Therefore, a dark current in the horizontal shift register of the solid state image sensing device can be reduced.
REFERENCES:
patent: 4567524 (1986-01-01), Levine
patent: 4774586 (1988-09-01), Koiki et al.
patent: 4985758 (1991-01-01), Hashimoto
patent: 4987466 (1991-01-01), Shibata et al.
1990 IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers, 16 Feb. 1990, San Francisco, CA. U.S., pp. 214-215, 299; K. Yonemoto, et al., "A 2 Million Pixel FIT-CCD Image Sensor for HDTB Camera System", (entire document).
IEEE Transactions on Electron Devices, vol. ED-31, No. 7, Jul. 1984, New York, NY, U.S., pp. 904-909; K. Horii, et al., "A New Configuration of CCD Imager with a Very Low Smear Level--FIT-CCD Imager", p. 904, left col. -p. 907, left col.
Ngo Ngan
Sony Corporation
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