Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2007-09-04
2007-09-04
Hollington, Jermele (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
Reexamination Certificate
active
11141338
ABSTRACT:
An integrated circuit (IC) wafer includes a plurality of die and a first die indicator (FDI) formed on the wafer in a metal layer. The plurality of die include a first potentially good die and the FDI, which is detectable by a machine vision recognition system, provides a unique indication of the first potentially good die.
REFERENCES:
patent: 5787174 (1998-07-01), Tuttle
patent: 6161213 (2000-12-01), Lofstrom
patent: 6701259 (2004-03-01), Dor et al.
patent: 6717430 (2004-04-01), Burch
patent: 6792359 (2004-09-01), Ninomiya et al.
patent: 6812477 (2004-11-01), Matsunami
patent: 6928375 (2005-08-01), Ono et al.
patent: 7010447 (2006-03-01), Ninomiya et al.
patent: 7119351 (2006-10-01), Woelki
patent: 2002/0035435 (2002-03-01), Ninomiya et al.
patent: 2003/0202182 (2003-10-01), Matsumoto et al.
patent: 2005/0042780 (2005-02-01), Matsunami
patent: 2005/0195396 (2005-09-01), Ono et al.
patent: 2007/0031993 (2007-02-01), Nemets et al.
Allison Timothy A.
Grossman Robert J.
Ney Joseph C.
Quinton Jeffrey C.
Schnabel Daniel L.
Delphi Technologies Inc.
Funke Jimmy L.
Hollington Jermele
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