Finger structured MOSFET

Details Finger structured MOSFET Finger structured MOSFET

1999-05-18

1999-11-23

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257341, 257270, 257287, H01L 2978

Patent

active

059905042

ABSTRACT:
A boundary of a well 102 of a finger structured MOSFET is positioned between an element region 104 and a gate contact 108. With this geometry, it is feasible to reduce the well and attain a decrease in noises. A well electric potential take-out region 105 is disposed in close proximity to the element region 104 within the well 102, thereby making it possible to reduce an areal size of the well and farther decrease the noises.

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