FinFETs single-sided implant formation

Details FinFETs single-sided implant formation FinFETs single-sided implant formation

2011-08-09

2011-08-09

Stark, Jarrett J (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

C257SE29268, C257SE29279, C257SE21427, C438S179000

Reexamination Certificate

active

07994612

ABSTRACT:
A method patterns pairs of semiconducting fins on an insulator layer and then patterns a linear gate conductor structure over and perpendicular to the fins. Next, the method patterns a mask on the insulator layer adjacent the fins such that sidewalls of the mask are parallel to the fins and are spaced from the fins a predetermined distance. The method performs an angled impurity implant into regions of the fins not protected by the gate conductor structure and the mask. This process forms impurity concentrations within the fins that are asymmetric and that mirror one another in adjacent pairs of fins.

REFERENCES:
patent: 6171913 (2001-01-01), Wang et al.
patent: 6300182 (2001-10-01), Yu
patent: 6396103 (2002-05-01), Riccobene et al.
patent: 6800905 (2004-10-01), Fried et al.
patent: 6858478 (2005-02-01), Chau et al.
patent: 6967143 (2005-11-01), Mathew et al.
patent: 7064019 (2006-06-01), Fried et al.
patent: 7064022 (2006-06-01), Hill et al.
patent: 2003/0113970 (2003-06-01), Fried et al.
patent: 2004/0217433 (2004-11-01), Yeo et al.
patent: 2007/0029624 (2007-02-01), Nowak

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