Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-06-27
2009-06-23
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S347000, C257SE29117
Reexamination Certificate
active
07550773
ABSTRACT:
FinFETs are provided with a body contact on a top surface of a semiconductor fin. The top body contact may be self-aligned with respect to the semiconductor fin and the source and drain regions. Alternately, the source and drain regions may be formed recessed from the top surface of the semiconductor fin. The body or an extension of the body may be contacted above the channel or above one of the source and drain regions. Electrical shorts between the source and drain and the body contacts are avoided by the recessing of the source and drain regions from the top surface of the semiconductor fin.
REFERENCES:
patent: 6774390 (2004-08-01), Sugiyama et al.
patent: 6913960 (2005-07-01), Bryant et al.
patent: 2006/0091463 (2006-05-01), Donze et al.
Booth, Jr. Roger A.
Cheng Kangguo
Mandelman Jack A.
Abate Esq. Joseph P.
International Business Machines - Corporation
Pham Hoai v
Scully , Scott, Murphy & Presser, P.C.
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