FINFET including a superlattice

Details FINFET including a superlattice FINFET including a superlattice

2007-04-10

2007-04-10

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S009000, C257S015000, C257S018000, C257SE39011, C438S761000

Reexamination Certificate

active

11426969

ABSTRACT:
A semiconductor device may include at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin. The fin may include at least one superlattice including a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.

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