FinFET field effect transistor insulated from the substrate

Details FinFET field effect transistor insulated from the substrate FinFET field effect transistor insulated from the substrate

2011-06-14

2011-06-14

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S231000, C257S900000, C257S902000, C257SE29292, C438S197000

Reexamination Certificate

active

07960734

ABSTRACT:
A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates.

REFERENCES:
patent: 7235468 (2007-06-01), Mouli
patent: 2002/0011612 (2002-01-01), Hieda
patent: 2005/0156202 (2005-07-01), Rhee et al.
patent: 2006/0252191 (2006-11-01), Kammler et al.
patent: 2007/0102763 (2007-05-01), Yeo et al.
Preliminary French Search Report, FR 07 04568, dated Feb. 6, 2008.

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