Fishing – trapping – and vermin destroying
Patent
1992-05-22
1993-09-28
Quach, T. N.
Fishing, trapping, and vermin destroying
437911, H01L 21332
Patent
active
052486222
ABSTRACT:
A semiconductor device includes a substrate of a first conductivity type. A first layer of a second conductivity type is formed on one surface of the substrate of the first conductivity type. A second layer of the first conductivity type is formed on the first layer of the second conductivity type. A third layer of the first conductivity type is selectively formed on the other surface of the substrate of the first conductivity type. A fourth layer of the second conductivity type is formed on the other surface of the substrate of the first conductivity type. The vertical dimension of the fourth layer falls within a range of 5 to 20 .mu.m and is smaller than that of the first layer.
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Fujiwara Takashi
Matsuda Hideo
Yoshida Takeomi
Kabushiki Kashiba Toshiba
Quach T. N.
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