1990-12-28
1992-09-15
Jackson, Jr., Jerome
357 39, 357 86, H01L 2974
Patent
active
051482541
ABSTRACT:
A semiconductor device includes a substrate of a first conductivity type. A first layer of a second conductivity type is formed on one surface of the substrate of the first conductivity type. A second layer of the first conductivity type is formed on the first layer of the second conductivity type. A third layer of the first conductivity type is selectively formed on the other surface of the substrate of the first conductivity type. A fourth layer of the second conductivity type is formed on the other surface of the substrate of the first conductivity type. The vertical dimension of the fourth layer falls within a range of 5 to 20 .mu.m and is smaller than that of the first layer.
REFERENCES:
patent: 3251004 (1966-05-01), Etal
patent: 3914780 (1975-10-01), Marek
patent: 4009059 (1977-02-01), Nakata
patent: 4121239 (1978-10-01), Berndes et al.
patent: 4443810 (1984-04-01), Yatsuo et al.
patent: 4450467 (1984-05-01), Nagano et al.
patent: 4484214 (1984-11-01), Misawa et al.
patent: 4500903 (1985-02-01), Yatsuo et al.
patent: 4511913 (1985-04-01), Nagano
patent: 4556898 (1985-12-01), Hagino
patent: 4609933 (1986-09-01), Nakajima et al.
patent: 4689647 (1987-08-01), Nakagawa et al.
patent: 4757025 (1988-06-01), Bender
patent: 4829348 (1989-05-01), Broich et al.
patent: 4841345 (1989-06-01), Majumdar
patent: 4951110 (1990-08-01), Miller et al.
Fujiwara Takashi
Matsuda Hideo
Yoshida Takeomi
Dang Hung Xuan
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
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