Metal treatment – Compositions – Heat treating
Patent
1973-03-09
1976-01-20
Rutledge, L. Dewayne
Metal treatment
Compositions
Heat treating
29578, 148186, 357 91, H01L 21263
Patent
active
039335275
ABSTRACT:
Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/.tau. = 1/.tau..sub.o + K.phi., where .tau. is the desired minority carrier lifetime, .tau..sub.o is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and .phi. is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 .times. 10.sup.12 and 5 .times. 10.sup.13 e/cm.sup.2, with electron radiation of intensity between 1 and 3 Mev.
REFERENCES:
patent: 2911533 (1959-11-01), Damask
patent: 3272661 (1966-09-01), Tomono et al.
patent: 3533857 (1970-10-01), Mayer et al.
patent: 3736192 (1973-05-01), Tokuyama et al.
Clark et al., "Isochronal Annealing of P and N-Type Silicon Irradiated at 80.degree.K," Phil. Mag., Nov. 1969, 20(167), pp. 951, 958.
Bartko John
Johnson Joseph E.
Tarneja Krishan S.
Davis J. M.
Menzemer C. L.
Rutledge L. Dewayne
Westinghouse Electric Corporation
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