Fine treatment agent and fine treatment method using same

Details Fine treatment agent and fine treatment method using same Fine treatment agent and fine treatment method using same

2005-12-19

2010-06-01

Deo, Duy-Vu N (Department: 1792)

Compositions

Etching or brightening compositions

C252S079200, C252S079300, C252S079400, C252S079500, C438S745000, C438S754000

Reexamination Certificate

active

07727415

ABSTRACT:
A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

REFERENCES:
patent: 4814293 (1989-03-01), Van Oekel
patent: 6451696 (2002-09-01), Hara et al.
patent: 6458657 (2002-10-01), Chang
patent: 6547647 (2003-04-01), Chang
patent: 2002/0072235 (2002-06-01), Haga et al.
patent: 0 292 057 (1988-11-01), None
patent: 0 986 097 (2000-03-01), None
patent: 1 176 633 (2002-01-01), None
patent: 62-221161 (1987-09-01), None
patent: 63-305518 (1988-12-01), None
patent: 3-53084 (1991-03-01), None
patent: 6-338489 (1994-12-01), None
patent: 2000-138192 (2000-05-01), None
patent: 2001-26890 (2001-01-01), None
patent: 2002-25965 (2002-01-01), None
patent: 2002-53984 (2002-02-01), None
patent: 2004-31791 (2004-01-01), None

Affiliated with

Also associated with

Rating

Fine treatment agent and fine treatment method using same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fine treatment agent and fine treatment method using same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fine treatment agent and fine treatment method using same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4249261