Fine processing method using oblique metal deposition

Details Fine processing method using oblique metal deposition Fine processing method using oblique metal deposition

1991-01-24

1992-06-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 50, H01L 21465, H01L 2130

Patent

active

051262886

ABSTRACT:
A resist pattern having a prescribed opening is formed over a semiconductor substrate through an insulative layer. A Ti film is formed, by oblique vacuum vapor deposition, on the resist pattern and on part of the area of the insulative layer which constitutes the bottom surface of the resist opening. The insulative film is etched using the Ti film as a mask to form a groove through the insulative layer.

REFERENCES:
patent: 4525919 (1985-07-01), Fabian
patent: 4546538 (1985-10-01), Suzuki
patent: 4618510 (1986-10-01), Tan
patent: 4629686 (1985-07-01), Kraus
patent: 4849376 (1989-07-01), Balzan et al.

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